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| 2SK1933 Silicon N Channel MOS FET Application TO-3P High speed power switching Features * * * * Low on-resistance High speed switching No secondary breakdown Suitable for Switching regulator 1 2 1 3 2 3 1. Gate 2. Drain 3. Source Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings 900 30 10 30 10 150 150 -55 to +150 Unit V V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** Value at Tc = 25 C 2SK1933 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 900 Typ -- Max -- Unit V Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS = 720 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 5 A VGS = 10 V * ID = 5 A VDS = 20 V * VDS = 10 V VGS = 0 f = 1 MHz ID = 5 A VGS = 10 V RL = 6 -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 30 -- -- V -------------------------------------------------------------------------------------- -- -- 2.0 -- -- -- -- 0.9 10 250 3.0 1.2 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 4.5 7 -- S -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time * Pulse Test -- -- -- -- -- -- -- -- 2620 830 320 30 140 285 170 0.9 -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = 10 A, VGS = 0 IF = 10 A, VGS = 0, diF / dt = 100 A / s ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 1600 -- ns -------------------------------------------------------------------------------------- 2SK1933 Power vs. Temperature Derating 150 Channel Dissipation Pch (W) Maximum Safe Operation Area 50 30 Drain Current I D (A) 10 lim in Op ite this era d a tio by re n R a is D S (o n) 10 s 0 10 s PW = 1 m s 100 D C 10 3 1 0.3 0.1 s m O pe ra n tio (1 Sh ot ) c (T = 50 25 C ) 0.05 0 50 100 150 1 3 10 30 100 300 1000 Case Temperature Tc (C) Drain to Source Voltage VDS (V) Typical Output Characteristics 10 10 V Drain Current I D (A) 8 5V 6 4 4V 2 VGS = 3.5 V 0 10 20 30 40 50 0 Typical Transfer Characteristics 10 Pulse Test VDS = 20 V Drain Current I D (A) 8 6 4 2 Pulse Test 6V Tc = 25C 75C -25C 2 4 6 8 10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 2SK1933 Drain to Source Saturation Voltage vs. Gate to Source Voltage 1.0 Static Drain to Source on State Resistance R DS (on) ( ) Drain to Source Saturation Voltage V DS (on) (V) 0.8 0.6 5A 0.4 0.2 2A ID = 1 A 0 4 8 12 16 20 Pulse Test 10 5 Static Drain to Source on State Resistance vs. Drain Current Pulse Test 2 1 0.5 0.2 0.1 0.5 VGS = 10 V 1 2 5 10 20 50 Gate to Source Voltage VGS (V) Drain Current I D (A) Static Drain to Source on State Resistance vs. Temperature 2.5 Static Drain to Source on State Resestance R DS (on) ( ) 2 1.5 1 0.5 0 -40 Pulse Test VGS = 10 V ID = 5 A 2A 1A 50 Forward Transfer Admittance | y fs | (S) 20 10 5 2 1 Forward Transfer Admittance vs. Drain Current Pulse Test VDS = 20 V Tc = 25C -25C 75C 0 40 80 120 160 0.5 0.1 0.2 Case Temperature Tc (C) 0.5 1 2 5 Drain Current I D (A) 10 2SK1933 Body to Drain Diode Reverse Recovery Time 5000 Reverse Recovery Time t rr (ns) 2000 1000 500 200 100 50 0.1 10000 Typical Capacitance vs. Drain to Source Voltage Ciss Capacitance C (pF) 1000 Coss di/dt = 100 A/ s, VGS = 0 Ta = 25C 100 Crss VGS = 0 f = 1 MHz 10 0.2 0.5 1 2 5 10 0 10 20 30 40 50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics 1000 Drain to Source Voltage V DS (V) 800 600 400 200 V DD = 250 V 400 V 600 V VDS I D = 10 A Gate to Source Voltage VGS (V) VGS 20 16 12 8 4 0 160 200 500 200 100 50 20 10 5 0.2 Switching Characteristics td(off) tf tr td(on) V DD = 250 V 400 V 600 V 40 80 120 Switching Time t (ns) VGS = 10 V, VDD = 30 V : PW = 5 s, duty < 1% = 0.5 1 2 5 10 20 0 Gate Charge Qg (nc) Drain Current I D (A) |
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